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Details
Features
◆High speed switching
◆Very low switching losses
◆IGBT-compatible driving voltage(18V for turn-on)
◆Fully controllable dv/dt
◆High blocking voltage with low on-resistance
◆Fast intrinsic diode with low reverse recovery(Qrr)
◆Temperature independent turn-off switching losses
◆Halogen free,RoHS compliant
◆High speed switching
◆Very low switching losses
◆IGBT-compatible driving voltage(18V for turn-on)
◆Fully controllable dv/dt
◆High blocking voltage with low on-resistance
◆Fast intrinsic diode with low reverse recovery(Qrr)
◆Temperature independent turn-off switching losses
◆Halogen free,RoHS compliant
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- About
- Company Profile
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- FIELD EFFECT TRANSISTOR
- SCHOTTKY DIODES
- ULTRAFAST RECOVERY POWER RECTIFIER
- SIC SCHOTTKY DIODES
- Silicon carbide MOSFET
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Address：Room 402-404,Qianhai ChengJin Building,Moon Bay Boulevard, Nanshan District,Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：sunny@hisemicon.com
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